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US5U38
Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TUMT5
Schottky Barrier DIODE
2.0
1.3
Features
1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
Applications
Abbreviated symbol : U38
Equivalent circuit
Switching
(5)
(4)
? 2
Packaging specifications
Package
Taping
Type
Code
TR
Basic ordering unit (pieces)
3000
? 1
(1)Gate
(2)Source
US5U38
(1) (2)
? 1 ESD protection diode
? 2 Body diode
(3)
(3)Anode
(4)Cathode
(5)Drain
Absolute maximum ratings (Ta=25 ° C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
Tch
P D ? 3
± 1.0
± 4.0
? 0.4
? 4.0
150
0.7
A
A
A
A
° C
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
V RM
V R
I F
25
20
0.7
V
V
A
Forward current surge peak
Junction temperature
Power dissipation
I FSM
Tj
P D
? 2
? 3
3.0
150
0.5
A
° C
W / ELEMENT
<MOSFET AND Di>
Power dissipation
Range of storage temperature
P D ? 3
Tstg
1.0
? 55 to +150
W / TOTAL
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1% ? 2 60Hz ? 1cyc. ? 3 Mounted on a ceramic board
1/5
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